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Introduction to magnetic random-access memory

Introduction to magnetic random-access memory (Loan 4 times)

Material type
단행본
Personal Author
Dieny, B. (Bernard). Goldfarb, Ronald Barry. Lee, Kyung-Jin.
Title Statement
Introduction to magnetic random-access memory / edited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee.
Publication, Distribution, etc
Piscataway, NJ :   IEEE Press,   c2017.  
Physical Medium
xviii, 242 p. : ill. (some col.) ; 25 cm.
ISBN
9781119009740
Content Notes
Basic Spintronic Transport Phenomena / Nicolas Locatelli, Vincent Cros -- Magnetic Properties of Materials for MRAM / Shinji Yuasa -- Micromagnetism Applied to Magnetic Nanostructures / Liliana D Buda-Prejbeanu -- Magnetization Dynamics / William E Bailey -- Magnetic Random-Access Memory / Bernard Dieny, I Lucian Prejbeanu -- Magnetic Back-End Technology / Michael C Gaidis -- Beyond MRAM: Nonvolatile Logic-in-Memory VLSI / Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno -- Appendix: Units for Magnetic Properties.
Bibliography, Etc. Note
Includes bibliographical references and index.
Subject Added Entry-Topical Term
Random access memory.
000 00000nam u2200205 a 4500
001 000045936225
005 20180323100326
008 180322s2017 njua b 001 0 eng d
020 ▼a 9781119009740
040 ▼a 211009 ▼c 211009 ▼d 211009
082 0 4 ▼a 004.53 ▼2 23
084 ▼a 004.53 ▼2 DDCK
090 ▼a 004.53 ▼b I61
245 0 0 ▼a Introduction to magnetic random-access memory / ▼c edited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee.
260 ▼a Piscataway, NJ : ▼b IEEE Press, ▼c c2017.
300 ▼a xviii, 242 p. : ▼b ill. (some col.) ; ▼c 25 cm.
504 ▼a Includes bibliographical references and index.
505 0 ▼a Basic Spintronic Transport Phenomena / Nicolas Locatelli, Vincent Cros -- Magnetic Properties of Materials for MRAM / Shinji Yuasa -- Micromagnetism Applied to Magnetic Nanostructures / Liliana D Buda-Prejbeanu -- Magnetization Dynamics / William E Bailey -- Magnetic Random-Access Memory / Bernard Dieny, I Lucian Prejbeanu -- Magnetic Back-End Technology / Michael C Gaidis -- Beyond MRAM: Nonvolatile Logic-in-Memory VLSI / Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno -- Appendix: Units for Magnetic Properties.
650 0 ▼a Random access memory.
700 1 ▼a Dieny, B. ▼q (Bernard).
700 1 ▼a Goldfarb, Ronald Barry.
700 1 ▼a Lee, Kyung-Jin.
945 ▼a KLPA

Holdings Information

No. Location Call Number Accession No. Availability Due Date Make a Reservation Service
No. 1 Location Science & Engineering Library/Sci-Info(Stacks2)/ Call Number 004.53 I61 Accession No. 121243862 Availability Available Due Date Make a Reservation Service B M

Contents information

Table of Contents

ABOUT THE EDITORS xi

PREFACE xiii

CHAPTER 1 BASIC SPINTRONIC TRANSPORT PHENOMENA 1

Nicolas Locatelli and Vincent Cros

1.1 Giant Magnetoresistance 2

1.2 Tunneling Magnetoresistance 9

1.3 The Spin-Transfer Phenomenon 20

CHAPTER 2 MAGNETIC PROPERTIES OF MATERIALS FOR MRAM 29

Shinji Yuasa

2.1 Magnetic Tunnel Junctions for MRAM 29

2.2 Magnetic Materials and Magnetic Properties 31

2.3 Basic Materials and Magnetotransport Properties 39

CHAPTER 3 MICROMAGNETISM APPLIED TO MAGNETIC NANOSTRUCTURES 55

Liliana D. Buda-Prejbeanu

3.1 Micromagnetic Theory: From Basic Concepts Toward the Equations 55

3.2 Micromagnetic Configurations in Magnetic Circular Dots 67

3.3 STT-Induced Magnetization Switching: Comparison of Macrospin and Micromagnetism 70

3.4 Example of Magnetization Precessional STT Switching: Role of Dipolar Coupling 73

CHAPTER 4 MAGNETIZATION DYNAMICS 79

William E. Bailey

4.1 Landau-Lifshitz-Gilbert Equation 79

4.2 Small-Angle Magnetization Dynamics 84

4.3 Large-Angle Dynamics: Switching 90

4.4 Magnetization Switching by Spin-Transfer 95

CHAPTER 5 MAGNETIC RANDOM-ACCESS MEMORY 101

Bernard Dieny and I. Lucian Prejbeanu

5.1 Introduction to Magnetic Random-Access Memory (MRAM) 101

5.2 Storage Function: MRAM Retention 104

5.3 Read Function 110

5.4 Field-Written MRAM (FIMS-MRAM) 112

5.5 Spin-Transfer Torque MRAM (STT-MRAM) 118

5.6 Thermally-Assisted MRAM (TA-MRAM) 135

5.7 Three-Terminal MRAM Devices 150

5.8 Comparison of MRAM with Other Nonvolatile Memory Technologies 153

5.9 Conclusion 157

CHAPTER 6 MAGNETIC BACK-END TECHNOLOGY 165

Michael C. Gaidis

6.1 Magnetoresistive Random-Access Memory (MRAM) Basics 165

6.2 MRAM Back-End-of-Line Structures 166

6.3 MRAM Process Integration 169

6.4 Process Characterization 187

CHAPTER 7 BEYOND MRAM: NONVOLATILE LOGIC-IN-MEMORY VLSI 199

Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, and Hideo Ohno

7.1 Introduction 199

7.2 Nonvolatile Logic-in-Memory Architecture 203

7.3 Circuit Scheme for Logic-in-Memory Architecture Based on Magnetic Flip-Flop Circuits 209

7.4 Nonvolatile Full Adder Using MTJ Devices in Combination with MOS Transistors 214

7.5 Content-Addressable Memory 217

7.6 MTJ-based Nonvolatile Field-Programmable Gate Array 224

APPENDIX 231

INDEX 233


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